STEFAN-TYPE FREE BOUNDARY PROBLEMS FOR HEAT EQUATIONS.KAWARADA H.1974; PUBL. RES. INST. MATH. SCI.; JAP.; DA. 1974; VOL. 9; NO 3; PP. 517-533; BIBL. 16 REF.Article

MEMORIZATION AND ASSOCIATION OF SPATIAL AND TIME-VARYING PATTERNS BY A NERVE NET MODEL.KAWARADA H.1976; SYST. COMPUTERS CONTROLS; U.S.A.; DA. 1976 PARU 1977; VOL. 7; NO 2; PP. 60-68; BIBL. 6 REF.Article

FREE BOUNDARY PROBLEMS FOR THE LAPLACE EQUATION: A PRIORI ESTIMATES, EXISTENCE THEOREMS, ASYMPTOTIC BEHAVIOURSDERVIEUX A; KAWARADA H.1979; I.R.I.A., LAB. RECH. INFORMAT. AUTOMAT., RAPP. RECH.; FRA; DA. 1979; NO 364; 47 P.; ABS. FRE; BIBL. 3 P.Serial Issue

AN APPLICATION OF THE INTEGRATED PENALTY METHOD TO FREE BOUNDARY PROBLEMS OF LAPLACE EQUATIONNATORI M; KAWARADA H.1981; NUMER. FUNCT. ANAL. OPTIM.; ISSN 0163-0563; USA; DA. 1981; VOL. 3; NO 1; PP. 1-17; BIBL. 12 REF.Article

ESTIMATION OF ELECTRICAL CONDUCTIVITY OF COMPOSITE MATERIALS. II. NUMERICAL METHOD FOR TWO-DIMENSIONAL TETRAGONAL TEXTURE.NATORI M; KAWARADA H; YANAGIDA H et al.1974; JAP. J. APPL. PHYS.; JAP.; DA. 1974; VOL. 13; NO 11; PP. 1772-1774; BIBL. 1 REF.Article

ON A PROGNOSIS OF GEAR SURFACE FAILURE USING SOUND OF GEARSUMEZAWA K; HANDA K; KAWARADA H et al.1982; BULL. JSME; ISSN 0021-3764; JPN; DA. 1982; VOL. 25; NO 203; PP. 834-841; BIBL. 10 REF.Article

ANNEALING BEHAVIOR OF SPIN DENSITY IN UHV EVAPORATED AMORPHOUS SILICONYONEHARA T; SAITOH T; KAWARADA H et al.1980; PHYS. LETT. SECT. A; ISSN 0375-9601; NLD; DA. 1980; VOL. 78; NO 2; PP. 192-194; BIBL. 7 REF.Article

Potential application of a triaxial three-dimensional fabric (3-DF) as an implantSHIKINAMI, Y; KAWARADA, H.Biomaterials. 1998, Vol 19, Num 7-9, pp 617-635, issn 0142-9612Article

Diamond electrolyte solution gate FETs for DNA and protein sensors using DNA/RNA aptamers : Fundamentals and Applications of CVD DiamondKAWARADA, H; RUSLINDA, A. R.Physica status solidi. A, Applications and materials science (Print). 2011, Vol 208, Num 9, pp 2005-2016, issn 1862-6300, 12 p.Article

Structure of chemical vapor deposited diamond (111) surfaces by scanning tunneling microscopySASAKI, H; KAWARADA, H.Japanese journal of applied physics. 1993, Vol 32, Num 12A, pp L1771-L1774, issn 0021-4922, 2Article

Enhancement/depletion surface channel field effect transistors of diamond and their logic circuitsHOKAZONO, A; KAWARADA, H.Japanese journal of applied physics. 1997, Vol 36, Num 12A, pp 7133-7139, issn 0021-4922, 1Article

Fabrication and characterization of metal-semiconductor field-effect transistor utilizing diamond surface-conductive layerITOH, M; KAWARADA, H.Japanese journal of applied physics. 1995, Vol 34, Num 9A, pp 4677-4681, issn 0021-4922, 1Article

Heteroepitaxial growth of tungsten carbide films on W(110) by plasma-enhanced chamical vapor depositionKATOH, M; KAWARADA, H.Japanese journal of applied physics. 1995, Vol 34, Num 7A, pp 3628-3630, issn 0021-4922, 1Article

Unsteady flow in porous media with a free surfaceKAWARADA, H; KOSHIGOE, H.Japan journal of industrial and applied mathematics. 1991, Vol 8, Num 1, pp 41-84, issn 0916-7005, 44 p.Article

Electric properties of metal/diamond interfaces utilizing hydrogen-terminated surfaces of homoepitaxial diamondsAOKI, M; KAWARADA, H.Japanese journal of applied physics. 1994, Vol 33, Num 5B, pp L708-L711, issn 0021-4922, 2Article

Numerical solution of the free surface drainage problem of two immiscible fluids by the boundary-element methodNATORI, M; KAWARADA, H.Japanese journal of applied physics. 1985, Vol 24, Num 10, pp 1359-1362, issn 0021-4922, 1Article

Electrically isolated metal-semiconductor field effect transistors and logic circuits on homoepitaxial diamondsKAWARADA, H; ITOH, M; HOKAZONO, A et al.Japanese journal of applied physics. 1996, Vol 35, Num 9B, pp L1165-L1168, issn 0021-4922, 2Article

Temperature and incident beam-current dependence of dominant free-exciton recombination radiation from high-purity chemical vapor deposition (CVD) diamondsYAMAGUCHI, A; YAMASHITA, S; TSUTSUMI, T et al.Japanese journal of applied physics. 1994, Vol 33, Num 8A, pp L1063-L1065, issn 0021-4922, 2Article

Initial growth of heteroepitaxial diamond on Si(001) substrates via β-SiC buffer layerSUESADA, T; NAKAMURA, N; NAGASAWA, H et al.Japanese journal of applied physics. 1995, Vol 34, Num 9A, pp 4898-4904, issn 0021-4922, 1Article

Virtual work space for assemblyHIRATA, Y; MIZUGUCHI, T; SATO, M et al.Systems and computers in Japan. 1994, Vol 25, Num 7, pp 92-100, issn 0882-1666Article

Effect of deuterium anneal on SiO₂(100) interface traps and electron spin resonance signals of ultrathin SiO₂ filmsFUKUDA, H; UENO, T; KAWARADA, H et al.Japanese journal of applied physics. 1993, Vol 32, Num 4B, pp L569-L571, issn 0021-4922, 2Article

Low pressure and low temperature synthesis of high quality diamond films using high density plasma CVDJIN WEI; KAWARADA, H; SUZUKI, J et al.Technology reports of the Osaka University. 1991, Vol 41, Num 203052, pp 83-91, issn 0030-6177Article

Intrinsic and extrinsic recombination radiation from undoped and boron-doped diamonds formed by plasma chemical vapor depositionKAWARADA, H; YOKOTA, Y; HIRAKI, A et al.Applied physics letters. 1990, Vol 57, Num 18, pp 1889-1891, issn 0003-6951, 3 p.Article

Characterization of roughness and defects at an Si/SiO₂ interface formed by lateral solid phase epitaxy using high-resolution electron microscopyKAWARADA, H; UENO, T; OHDOMARI, I et al.Journal of applied physics. 1988, Vol 63, Num 8, pp 2641-2644, issn 0021-8979, 1Article

Effects of electron and neutron irradiation on the cathodoluminescence of nitrogen-doped CVD diamondYOKOTA, Y; KAWARADA, H; HIRAKI, A et al.Japanese journal of applied physics. 1990, Vol 29, Num 12, pp L2232-L2235, issn 0021-4922, 2Article